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| Excelics * * * * * * 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 1W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA -13 550 rd EIB1818-1P MAX MIN 29.0 5.0 TYP 29.5 5.5 MAX UNIT dBm dB MIN 29 6.0 TYP 30.0 6.5 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 25 440 37 720 760 -1.0 -15 16 -2.5 850 550 20 425 43* 720 360 -2.0 -15 16 o % mA dBm 850 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=2.4mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical -45dBc IM3 at Pout=20dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 90mA 32dBm 175oC -65/175oC 8.5W 8V -3V Idss 15mA @ 3dB Compression 150oC -65/150oC 7.1W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com |
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